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Indium Arsenide (InAs) Wafer

Indium Arsenide (InAs) Wafer

Standard specs of InAs wafer / Specifiche standard dei wafer in Arsenuro di indio:

Diameter 2", 3"
Thickness 100um, 200um, 300 um, 400 um, 500 um
Type P type, N type
Dopant Undopped, S, Sn, Zn
Polishing SSP, DSP
Orientation <100>
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