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Thermal Oxide (Si+SiO2) Wafer

Thermal Oxide (Si+SiO2) Wafer

Standard specs of Si+SiO2 wafers / Specifiche standard dei Si+SiO2 wafers

Surface Polishing SSP / DSP
Diameter 2", 3", 4", 5"
Type P type, N type
SiO2 layer thickness 100nm ~ 1000nm
Orientation <100>, <111>
Resistivity 0.001-25000(Ω•cm) 


Fill the box with specs required / Inserire le specifiche richieste qui sotto:

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