Thermal Oxide (Si+SiO2) Wafer
Thermal Oxide (Si+SiO2) Wafer
Standard specs of Si+SiO2 wafers / Specifiche standard dei Si+SiO2 wafers
| Surface Polishing | SSP / DSP |
| Diameter | 2", 3", 4", 5" |
| Type | P type, N type |
| SiO2 layer thickness | 100nm ~ 1000nm |
| Orientation | <100>, <111> |
| Resistivity | 0.001-25000(Ω•cm) |
Fill the box with specs required / Inserire le specifiche richieste qui sotto:
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